Invention Grant
- Patent Title: Local germanium condensation for suspended nanowire and finFET devices
-
Application No.: US14755029Application Date: 2015-06-30
-
Publication No.: US09859430B2Publication Date: 2018-01-02
- Inventor: Josephine B. Chang , Leland Chang , Isaac Lauer , Jeffrey W. Sleight
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Edward J. Wixted, III
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/786 ; H01L21/308 ; H01L21/324 ; H01L21/02 ; H01L29/06 ; H01L29/16 ; H01L29/66 ; H01L21/306
Abstract:
A semiconductor wafer is provided, where the semiconductor wafer includes a semiconductor substrate and a hard mask layer formed on the semiconductor substrate. Fins are formed in the semiconductor substrate and the hard mask layer. A spacer is formed on an exposed sidewall of the hard mask layer and the semiconductor substrate. The exposed portion of the semiconductor substrate is etched. A silicon-germanium layer is epitaxially formed on the exposed portions of the semiconductor substrate. An annealed silicon-germanium region is formed by a thermal annealing process within the semiconductor substrate adjacent to the silicon-germanium layer. The silicon-germanium region and the silicon-germanium layer are removed. The hard mask layer and the spacer are removed.
Public/Granted literature
- US20170005190A1 LOCAL GERMANIUM CONDENSATION FOR SUSPENDED NANOWIRE AND FINFET DEVICES Public/Granted day:2017-01-05
Information query
IPC分类:
