Invention Grant
- Patent Title: Metal oxide semiconductor layer forming composition, and method for producing metal oxide semiconductor layer using same
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Application No.: US15325842Application Date: 2015-07-14
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Publication No.: US09859442B2Publication Date: 2018-01-02
- Inventor: Shinichi Maeda
- Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
- Applicant Address: JP Tokyo
- Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-146105 20140716; JP2015-049862 20150312
- International Application: PCT/JP2015/070204 WO 20150714
- International Announcement: WO2016/010052 WO 20160121
- Main IPC: C01G15/00
- IPC: C01G15/00 ; H01L29/786 ; C09D5/24 ; C09D1/00 ; H01L21/02 ; H01L29/66 ; H01L29/24
Abstract:
The invention provides a metal oxide semiconductor layer forming composition containing a solvent represented by formula [1]: (wherein R1 represents a C2 to C3 linear or branched alkylene group, and R2 represents a C1 to C3 linear or branched alkyl group) and an inorganic metal salt.
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