Invention Grant
- Patent Title: Small aperture formation for facilitating optoelectronic device integration with defective semiconductor materials
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Application No.: US14966850Application Date: 2015-12-11
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Publication No.: US09859685B2Publication Date: 2018-01-02
- Inventor: Effendi Leobandung , Ning Li , Devendra K. Sadana
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Louis Percello
- Main IPC: H01S5/18
- IPC: H01S5/18 ; H01S5/183 ; H01L27/092 ; H01S5/10 ; H01S5/187 ; H01S5/22
Abstract:
In one example, a device includes a layered semiconductor material having material defects formed therein and an optoelectronic device formed in the layered semiconductor material. The optoelectronic device includes an active region comprising an aperture formed through the layered semiconductor material. The aperture is formed in a manner that avoids intersection with the material defects.
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