- Patent Title: Light guiding for vertical external cavity surface emitting laser
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Application No.: US14787493Application Date: 2014-05-04
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Publication No.: US09859686B2Publication Date: 2018-01-02
- Inventor: Ferdinand Felder , Matthias Fill , Hans Zogg , Pierluigi Debernardi
- Applicant: CAMLIN TECHNOLOGIES (SWITZERLAND) LIMITED
- Applicant Address: CH Zurich
- Assignee: Camlin Technologies (Switzerland) Limited
- Current Assignee: Camlin Technologies (Switzerland) Limited
- Current Assignee Address: CH Zurich
- Agency: Burns & Levinson LLP
- Agent John C. Serio; Marlo Schepper Grolnic
- Priority: EP13167055 20130508
- International Application: PCT/EP2014/059022 WO 20140504
- International Announcement: WO2014/180751 WO 20141113
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/183 ; H01S5/42 ; H01S5/04 ; H01S5/14 ; H01S5/32

Abstract:
The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighboring region (25) that at least partly surrounds said mesa (24) has a second refractive index (n2)—At least part of said mesa (24) has a first refractive index (n1) and a part of the neighboring region (25) transversally adjacent to said part of the mesa (24) has second refractive index (n 2)—Said first refractive index (n1) is higher than said second refractive index (n2) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method of manufacturing of such a stack. The VECSEL comprises a IV-VI semiconductor gain material grown on the lower mirror and an external cavity mirror. A plurality of mesa (22) may be grown on a single substrate (23). Anti-guiding is prevented by the lower refractive index of the surrounding material (25) improving the single transversal mode operation.
Public/Granted literature
- US20160104998A1 LIGHT GUIDING FOR VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER Public/Granted day:2016-04-14
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