Invention Grant
- Patent Title: Electronic circuit and semiconductor device
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Application No.: US15060660Application Date: 2016-03-04
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Publication No.: US09859885B2Publication Date: 2018-01-02
- Inventor: Shunsuke Kubota , Hiroyasu Yoshizawa
- Applicant: Hitachi, Ltd.
- Applicant Address: JP Chiba-shi
- Assignee: SII Semiconductor Corporation
- Current Assignee: SII Semiconductor Corporation
- Current Assignee Address: JP Chiba-shi
- Agency: Crowell & Moring LLP
- Priority: JP2015-158915 20150811
- Main IPC: H03K17/00
- IPC: H03K17/00 ; H03K17/22 ; H03K19/0185 ; G06F1/24 ; G06F1/26 ; G01S7/52 ; G01S15/89 ; H03K17/0812 ; H03K19/003 ; H03K17/10 ; H03K17/30

Abstract:
An electronic circuit includes a first level shift circuit, a second level shift circuit, an internal circuit, a high voltage circuit, first and second transistors, and first and second protective circuits. The first and second protective circuits perform control the first and second transistors so as to make them non-conductive when at least one of a plurality of types of power supply voltages becomes equal to or less than a predetermined value.
Public/Granted literature
- US20170047921A1 Electronic Circuit and Semiconductor Device Public/Granted day:2017-02-16
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