Invention Grant
- Patent Title: High speed voltage level shifter
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Application No.: US15367706Application Date: 2016-12-02
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Publication No.: US09859893B1Publication Date: 2018-01-02
- Inventor: Venkat Narayanan , Rakesh Vattikonda , De Lu , Ramaprasath Vilangudipitchai , Samrat Sinharoy , Rui Chen
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP/Qualcomm
- Main IPC: H03K3/35
- IPC: H03K3/35 ; H03K19/00 ; G09G3/20 ; H03K19/0185 ; H03K3/356

Abstract:
In one embodiment, a voltage level shifter includes a first NOR gate having a first input configured to receive a first input signal in a first power domain, a second input configured to receive an enable signal in a second power domain, a third input, and an output. The voltage level shifter also includes a second NOR gate having a first input configured to receive a second input signal in the first power domain, a second input configured to receive the enable signal in the second power domain, a third input coupled to the output of the first NOR gate, and an output coupled to the third input of the first NOR gate. The first and second NOR gates are powered by a supply voltage of the second power domain.
Public/Granted literature
- US20180006650A1 HIGH SPEED VOLTAGE LEVEL SHIFTER Public/Granted day:2018-01-04
Information query
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