Invention Grant
- Patent Title: Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
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Application No.: US14652686Application Date: 2013-12-03
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Publication No.: US09863035B2Publication Date: 2018-01-09
- Inventor: Toshiaki Fujita , Hiroshi Tanaka , Noriaki Nagatomo
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2012-279149 20121221
- International Application: PCT/JP2013/082905 WO 20131203
- International Announcement: WO2014/097910 WO 20140626
- Main IPC: H01C7/00
- IPC: H01C7/00 ; C23C14/34 ; H01C17/12 ; G01K7/22 ; C23C14/06 ; H01C7/04
Abstract:
Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (Ti1-vCrv)xAly (N1-wOw)z (where 0.0
Public/Granted literature
- US20150337433A1 METAL-NITRIDE THERMISTOR MATERIAL, MANUFACTURING METHOD THEREFOR, AND FILM-TYPE THERMISTOR SENSOR Public/Granted day:2015-11-26
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