Method for manufacturing a single crystal according to a CZ method, including: pre-examining a correlation between an Al/Li ratio in a quartz raw material powder used for producing the quartz crucible, a use time of the crucible, a devitrification ratio at the use time, and occurrence or nonoccurrence of melt leakage attributable to the devitrification part; setting a range of the devitrification ratio of the quartz crucible in order not to generate the melt leakage, and determining a maximum use time of the quartz crucible according to the Al/Li ratio so as to fall within the set range of the ratio, on the basis of the correlation; and growing the single crystal by using the quartz crucible in the range of the maximum use time. This provides a manufacturing method which can efficiently use a quartz crucible to grow a single crystal while preventing occurrence of melt leakage.