Invention Grant
- Patent Title: Vertical hall sensor, hall sensor module and method for manufacturing the same
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Application No.: US14594499Application Date: 2015-01-12
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Publication No.: US09864020B2Publication Date: 2018-01-09
- Inventor: Francois Hebert
- Applicant: Magnachip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2014-0090099 20140716
- Main IPC: G01R33/07
- IPC: G01R33/07 ; H01L43/14 ; G01R33/00 ; H01L43/06
Abstract:
A vertical Hall sensor, a Hall sensor module, and a method for manufacturing the same are provided. By applying a trench structure inside a substrate with respect to a ground terminal, a directional component parallel to surface of the substrate is maximized with respect to a current flow to detect the magnetic field with improved sensitivity.
Public/Granted literature
- US20160018478A1 VERTICAL HALL SENSOR, HALL SENSOR MODULE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-01-21
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