Invention Grant
- Patent Title: Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material
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Application No.: US15153093Application Date: 2016-05-12
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Publication No.: US09864135B2Publication Date: 2018-01-09
- Inventor: Cheng-Wei Cheng , Ning Li , Devendra K. Sadana , Kuen-Ting Shiu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: G02B6/12
- IPC: G02B6/12 ; H01S5/02 ; H01L31/0296 ; H01L31/18 ; G02B6/122 ; H01S5/026 ; H01S5/343 ; H01L27/144 ; H01L31/0232 ; H01L31/0304 ; H01L31/105 ; H01L31/16 ; H01L27/108 ; H01L27/11517 ; H01L27/11563 ; H01L29/73 ; H01L29/772 ; H01L29/78 ; H01L29/808 ; H01L29/872

Abstract:
An electrical device that in one embodiment includes a first semiconductor device positioned on a first portion of a type IV semiconductor substrate, and an optoelectronic light emission device of type III-V semiconductor materials that is in electrical communication with the first semiconductor device. The optoelectronic light emission device is positioned adjacent to the first semiconductor device on the first portion of the type IV semiconductor substrate. A dielectric waveguide is present on a second portion of the type IV semiconductor substrate. An optoelectronic light detection device of type III-V semiconductor material is present on a third portion of the type IV semiconductor device. The dielectric waveguide is positioned between and aligned with the optoelectronic light detection device and optoelectronic light emission device to transmit a light signal from the optoelectronic light emission device to the optoelectronic light detection device.
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