Invention Grant
- Patent Title: Write data path to reduce charge leakage of negative boost
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Application No.: US15466749Application Date: 2017-03-22
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Publication No.: US09865337B1Publication Date: 2018-01-09
- Inventor: Fahad Ahmed , Mukund Narasimhan , Raghav Gupta , Pradeep Raj , Rahul Sahu , Po-Hung Chen , Chulmin Jung
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: G11C5/10
- IPC: G11C5/10 ; G11C11/419 ; G11C11/417
Abstract:
A write driver is provided that includes a first write driver inverter that inverts a data signal to drive a gate of a second write driver transistor. The write driver transistor has a terminal coupled to a bit line and another terminal coupled to a boost capacitor. A ground for the first write driver inverter floats during a write assist period to choke off leakage of boost charge from the boost capacitor through the write driver transistor.
Information query
