Invention Grant
- Patent Title: Inductor structure with magnetic material
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Application No.: US15429272Application Date: 2017-02-10
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Publication No.: US09865389B2Publication Date: 2018-01-09
- Inventor: Yuan-Tai Tseng , Ming-Chyi Liu , Chung-Yen Chou , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01F27/28 ; H01F27/24 ; H01F1/03 ; H01L49/02
Abstract:
An inductor structure is provided. The inductor structure includes a first dielectric layer formed over a substrate and a first metal layer formed in the first dielectric layer. The inductor structure includes a magnetic layer formed over the first dielectric layer, and the magnetic layer has a main portion and a tapered portion extending from the main portion.
Public/Granted literature
- US20170154721A1 INDUCTOR STRUCTURE WITH MAGNETIC MATERIAL Public/Granted day:2017-06-01
Information query
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