Invention Grant
- Patent Title: Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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Application No.: US14230356Application Date: 2014-03-31
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Publication No.: US09865451B2Publication Date: 2018-01-09
- Inventor: Takaaki Noda , Shingo Nohara , Yoshiro Hirose
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC, INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC, INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2013-137518 20130628
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/02 ; C23C16/44
Abstract:
A method for cleaning an interior of a process chamber after performing a process of forming a carbon-containing film on a substrate in the process chamber includes performing a cycle a predetermined number of times. The cycle includes supplying a modifying gas into the process chamber to modify deposits including the carbon-containing film deposited on a surface of a member in the process chamber and supplying an etching gas into the process chamber to remove the modified deposits through a thermochemical reaction.
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