Invention Grant
- Patent Title: Methods of forming semiconductor devices using semi-bidirectional patterning and islands
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Application No.: US15352139Application Date: 2016-11-15
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Publication No.: US09865473B1Publication Date: 2018-01-09
- Inventor: Atsushi Ogino
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Nathan B. Davis
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01L23/00 ; H01L27/02 ; H01L27/11 ; H01L21/308 ; H01L21/02
Abstract:
Devices and methods of fabricating integrated circuit devices using semi-bidirectional patterning are provided. One method includes, for instance: obtaining an intermediate semiconductor device having a dielectric layer, a first hardmask layer, a second hardmask layer, a third hardmask layer, and a lithography stack; patterning a first set of lines; patterning a second set of lines between the first set of lines; etching to define a combination of the first and second set of lines; depositing a second lithography stack; patterning a set of islands; etching to define the set of islands, leaving an OPL; depositing a spacer over the OPL; etching the spacer, leaving a vertical set of spacers; and etching the second hardmask layer using the third hardmask layer and the set of vertical spacers as masks.
Information query
IPC分类:
