Invention Grant
- Patent Title: Formation of strained fins in a finFET device
-
Application No.: US15263836Application Date: 2016-09-13
-
Publication No.: US09865511B2Publication Date: 2018-01-09
- Inventor: Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Bryan D. Wells
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L27/12 ; H01L21/02 ; H01L21/308 ; H01L21/324 ; H01L21/306 ; H01L21/762 ; H01L21/225 ; H01L29/165 ; H01L29/78 ; H01L29/06 ; H01L29/66

Abstract:
In an aspect of the present invention, a field-effect transistor (FET) structure is formed. The FET structure comprises a plurality of fins formed on a semiconductor substrate, wherein the plurality of fins includes a set of fins that include a base portion that is comprised of relaxed silicon-germanium (SiGe) and an upper portion that is comprised of semiconductor material. In one aspect, a first set of one or more fins that include an upper portion comprised of a first semiconductor material. In another aspect, a second set of one or more fins that include an upper portion comprised of a second semiconductor material.
Public/Granted literature
- US20160379895A1 FORMATION OF STRAINED FINS IN A FINFET DEVICE Public/Granted day:2016-12-29
Information query
IPC分类: