Invention Grant
- Patent Title: Interconnect structure with misaligned metal lines coupled using different interconnect layer
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Application No.: US15409090Application Date: 2017-01-18
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Publication No.: US09865542B2Publication Date: 2018-01-09
- Inventor: Jhon Jhy Liaw , Yen-Huei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/528 ; H01L23/522 ; H01L23/532 ; H01L27/11 ; H01L21/768 ; H01L21/321 ; H01L21/8234
Abstract:
In some embodiments, an interconnect structure includes first and second metal lines, and an end-to-end portion. The first metal line is formed in a first interconnect layer, extends in length substantially along a first direction and ends at a first end portion. The second metal line is formed in the first interconnect layer, starts from a second end portion, extends in length substantially along the first direction and is misaligned with the first metal line in the first direction. The end-to-end portion couples the first metal line to the second metal line, is formed in a second interconnect layer different from the first interconnect layer, and is overlapped with the first and second end portions. A width of the end-to-end portion at where the end-to-end portion is overlapped with the first end portion is wider than a width of the first end portion by at least about 10%.
Public/Granted literature
- US20170133320A1 INTERCONNECT STRUCTURE WITH MISALIGNED METAL LINES COUPLED USING DIFFERENT INTERCONNECT LAYER Public/Granted day:2017-05-11
Information query
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