Invention Grant
- Patent Title: Semiconductor device layout having a power rail
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Application No.: US14874916Application Date: 2015-10-05
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Publication No.: US09865544B2Publication Date: 2018-01-09
- Inventor: Jong-Hoon Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L23/50
- IPC: H01L23/50 ; H01L23/528 ; H01L23/522 ; H01L27/02 ; H01L29/417

Abstract:
A semiconductor device is provided as follows. An active region extends along a first direction. A gate line overlaps the active region and extending along a second direction intersecting the first direction. A power rail has a main pattern extending along the first direction and a sub-pattern branching off from the main pattern to extend along the second direction. A first source/drain contact, electrically connected to the power rail, overlaps the active region and the sub-pattern.
Public/Granted literature
- US20170098608A1 SEMICONDUCTOR DEVICE HAVING A POWER RAIL Public/Granted day:2017-04-06
Information query
IPC分类: