A semiconductor device and a method for testing the semiconductor device are provided. The semiconductor device includes a diode (protection element) and a semiconductor element having a withstand voltage that is higher than that of the diode provided on one and the same first-conductive-type semiconductor substrate, the diode having a second-conductive-type first semiconductor region selectively provided in a front surface layer of the semiconductor substrate. A high concentration region is open in a normal time, but is short-circuited to a potential higher than that of a GND pad through a second wiring layer in a screening test time. Thus, a semiconductor device and a method for testing the semiconductor device are provided, in which a protection element can be prevented from breaking down and initial failure of a device which is formed on one and the same semiconductor substrate as the protection element can be detected accurately.