Invention Grant
- Patent Title: System and method of fabricating ESD FinFET with improved metal landing in the drain
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Application No.: US15339282Application Date: 2016-10-31
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Publication No.: US09865589B1Publication Date: 2018-01-09
- Inventor: Tzung-Chi Lee , Tung-Heng Hsieh , Bao-Ru Young , Yung Feng Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/66 ; H01L29/08 ; H01L21/266 ; H01L21/3115 ; G06F17/50 ; H01L29/78 ; H01L29/06
Abstract:
A mandrel is formed over an active region that includes a first region and a second region. The first region and the second region are reserved for the formation of a source and a drain of a FinFET, respectively. A portion of the mandrel formed over the second region is broken up into a first segment and a second segment separated from the first segment by a gap. Spacers are formed on opposite sides of the mandrel. Using the spacers, fins are defined. The fins protrude upwardly out of the active region. A portion of the second region corresponding to the gap has no fins formed thereover. The source is epitaxially grown on the fins in the first region. At least a portion of the drain is epitaxially grown on the portion of the second region having no fins.
Information query
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