Invention Grant
- Patent Title: Transistor structure having N-type and P-type elongated regions intersecting under common gate
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Application No.: US14662734Application Date: 2015-03-19
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Publication No.: US09865603B2Publication Date: 2018-01-09
- Inventor: Hui Zang , Min-hwa Chi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L21/82 ; H01L27/092 ; H01L21/8238
Abstract:
A semiconductor structure includes a semiconductor substrate, at least one first elongated region of n-type or p-type, and at least one other second elongated region of the other of n-type or p-type, the first and second elongated regions crossing such that the first elongated region and the second elongated region intersect at a common area, and a shared gate structure over each common area.
Public/Granted literature
- US20160276350A1 MERGED N/P TYPE TRANSISTOR Public/Granted day:2016-09-22
Information query
IPC分类:
