A memory circuit includes a first column of memory cells arranged along a first direction, a first supply voltage line extending along the first direction in a first conductive layer of the memory circuit, a second supply voltage line, a first resistive device electrically connecting the first supply voltage line and the second supply voltage line, and a supply voltage source. Each memory cell of the first column of memory cells includes a supply voltage line segment. The first supply voltage line is made of at least the supply voltage line segments of the first column of memory cells. The supply voltage source is electrically coupled with first supply voltage line through one or more conductive paths, and the second supply voltage line and the first resistive device is in a lowest resistance path of the one or more conductive paths.