Invention Grant
- Patent Title: Semiconductor device and semiconductor memory device
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Application No.: US15062870Application Date: 2016-03-07
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Publication No.: US09865606B2Publication Date: 2018-01-09
- Inventor: Chika Tanaka , Daisuke Matsushita
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2015-056490 20150319
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L27/11 ; H01L29/739
Abstract:
According to one embodiment, a semiconductor device includes a first region having a first conductivity type in a semiconductor region; a second region having a second conductivity type in the semiconductor region; a gate electrode above a first part of the semiconductor region between the first region and the second region; a gate insulating layer between the first part and the gate electrode; a third region having the first conductivity type below the second region; and a fourth region across the second region and the third region and including a first impurity.
Public/Granted literature
- US20160276351A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2016-09-22
Information query
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