There is provided a semiconductor device having an arrangement structure in which high-density line patterns having relatively small widths and relatively tight pitches may be formed. The semiconductor device includes a plurality of line patterns that are spaced apart from one another. The plurality of line patterns include a plurality of main lines that have a first gap therebetween and extend in a first direction and a plurality of sublines that are bent from one end of each of the plurality of main lines. The plurality of sublines have therebetween a distance that is greater than the first gap, and may be spaced apart from extension lines that extend from the one end of each of the plurality of main lines corresponding to the plurality of sublines in the first direction.