Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
-
Application No.: US15170558Application Date: 2016-06-01
-
Publication No.: US09865615B2Publication Date: 2018-01-09
- Inventor: Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0002680 20160108
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/11582 ; H01L21/768 ; H01L23/528 ; H01L27/11565 ; H01L27/1157 ; H01L27/11504 ; H01L29/417

Abstract:
A semiconductor device includes bit lines extending along a first direction, the bit lines being arranged along a second direction intersecting the first direction, a plurality of channel layers disposed under the bit lines, the plurality of channel layers extending in a third direction perpendicular to a plane extending along the first and second directions and spaced apart along the second direction, so that each channel layer is at least partially overlapped with at least two of the bit lines, and a contact plug extending, from the channel layer, toward one of the bit lines overlapped with the channel layer.
Public/Granted literature
- US20170200733A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-07-13
Information query
IPC分类: