Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15402272Application Date: 2017-01-10
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Publication No.: US09865617B2Publication Date: 2018-01-09
- Inventor: Hauk Han , Ji Woon Im , Do Hyung Kim , Hyun Seok Lim
- Applicant: Hauk Han , Ji Woon Im , Do Hyung Kim , Hyun Seok Lim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2016-0058243 20160512
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L29/36 ; H01L27/11582 ; H01L29/06 ; H01L23/522 ; H01L21/306
Abstract:
A semiconductor device includes a first interlayer insulating layer and a second interlayer insulating layer, and a horizontal conductive pattern interposed between the first interlayer insulating layer and the second interlayer insulating layer. Vertical structures extend through the first interlayer insulating layer, the second interlayer insulating layer, and the horizontal conductive pattern. Each of the first interlayer insulating layer and the second interlayer insulating layer has regions of different impurity concentrations.
Public/Granted literature
- US20170330893A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-11-16
Information query
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