Invention Grant
- Patent Title: Image sensor with a reset transistor having spontaneous polarization characteristcs and method for operating the same
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Application No.: US14566409Application Date: 2014-12-10
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Publication No.: US09865634B2Publication Date: 2018-01-09
- Inventor: Do-Hwan Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0129840 20140929
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/374 ; H04N5/359 ; H01L29/51
Abstract:
An image sensor includes a photoelectric conversion element suitable for generating photocharges corresponding to incident light, a transfer transistor suitable for transferring the generated photocharges to a floating diffusion node based on a transfer signal, and a reset transistor suitable for resetting the floating diffusion node based on a reset signal and including a memory gate.
Public/Granted literature
- US20160093654A1 IMAGE SENSOR AND METHOD FOR OPERATING THE SAME Public/Granted day:2016-03-31
Information query
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