Invention Grant
- Patent Title: Three-dimensional semiconductor memory devices including a vertical channel
-
Application No.: US15403440Application Date: 2017-01-11
-
Publication No.: US09865685B2Publication Date: 2018-01-09
- Inventor: Jaesung Sim , Youngwoo Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0047447 20140421
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L27/11556 ; H01L27/11582 ; H01L29/04 ; H01L29/267 ; H01L29/161 ; H01L29/165 ; H01L29/788 ; H01L29/16
Abstract:
Semiconductor memory devices and methods of forming the semiconductor devices may be provided. The semiconductor memory devices may include a channel portion of an active pillar that may be formed of a semiconductor material having a charge mobility greater than a charge mobility of silicon. The semiconductor devices may also include a non-channel portion of the active pillar including a semiconductor material having a high silicon content.
Public/Granted literature
- US20170125522A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES INCLUDING A VERTICAL CHANNEL Public/Granted day:2017-05-04
Information query
IPC分类:
