Invention Grant
- Patent Title: III-V lateral bipolar junction transistor
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Application No.: US15092224Application Date: 2016-04-06
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Publication No.: US09865714B2Publication Date: 2018-01-09
- Inventor: Pouya Hashemi , Tak H. Ning , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L29/735 ; H01L29/205 ; H01L29/08 ; H01L29/04 ; H01L29/737 ; H01L29/20 ; H01L21/02 ; H01L21/265 ; H01L21/308 ; H01L21/306 ; H01L29/207
Abstract:
A lateral bipolar junction transistor (LBJT) device that includes an intrinsic III-V semiconductor material having a first band gap; and a base region present on the intrinsic III-V semiconductor material. The base region is composed of an III-V semiconductor material having a second band gap that is less than the first band gap. Emitter and collector regions present on opposing sides of the base region. The emitter and collector regions are composed of epitaxial III-V semiconductor material that is present on the intrinsic III-V semiconductor material.
Public/Granted literature
- US20170294525A1 III-V LATERAL BIPOLAR JUNCTION TRANSISTOR Public/Granted day:2017-10-12
Information query
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