Invention Grant
- Patent Title: Epitaxial wafer for heterojunction bipolar transistor and heterojunction bipolar transistor
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Application No.: US15312946Application Date: 2015-05-26
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Publication No.: US09865715B2Publication Date: 2018-01-09
- Inventor: Shinjiro Fujio , Takeshi Meguro
- Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2014-108047 20140526
- International Application: PCT/JP2015/065060 WO 20150526
- International Announcement: WO2015/182592 WO 20151203
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/205 ; H01L29/10 ; H01L29/66
Abstract:
An epitaxial wafer for a heterojunction bipolar transistor and a heterojunction bipolar transistor that are capable of further reducing a turn-on voltage are provided. An epitaxial wafer for a heterojunction bipolar transistor includes a collector layer made of GaAs, a base layer formed on the collector layer and made of InGaAs, and an emitter layer formed on the base layer and made of InGaP, and the base layer has an In composition that decreases from the emitter layer side toward the collector layer side.
Public/Granted literature
- US20170200816A1 EPITAXIAL WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR Public/Granted day:2017-07-13
Information query
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