Invention Grant
- Patent Title: High electron-mobility transistor
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Application No.: US15241924Application Date: 2016-08-19
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Publication No.: US09865720B2Publication Date: 2018-01-09
- Inventor: Ken Nakata
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: JP2015-162602 20150820
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L29/08 ; H01L29/20 ; H01L29/205
Abstract:
A nitride semiconductor device is disclosed. The semiconductor device provides the GaN channel layer, the InAlN barrier layer on the GaN channel layer, and the n-type AlGaN layer on the InAlN barrier layer. The source and drain electrodes are formed on the n-type AlGaN layer, while, the gate electrode is formed directly on the InAlN barrier layer. The n-type AlGaN layer has the aluminum (Al) composition greater than 20% at the interface against the InAlN barrier layer, which is greater than the aluminum (Al) composition at the interface against the source electrode.
Public/Granted literature
- US20170054015A1 HIGH ELECTRON-MOBILITY TRANSISTOR Public/Granted day:2017-02-23
Information query
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