Invention Grant
- Patent Title: Laterally diffused metal oxide semiconductor with segmented gate oxide
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Application No.: US15385709Application Date: 2016-12-20
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Publication No.: US09865729B1Publication Date: 2018-01-09
- Inventor: Sameer Pendharkar , Ming-yeh Chuang
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Tuenlap D. Chan; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/40 ; H01L29/66
Abstract:
A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.
Information query
IPC分类:
