Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing the same
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Application No.: US15292144Application Date: 2016-10-13
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Publication No.: US09865736B2Publication Date: 2018-01-09
- Inventor: Chong-Kwang Chang , Young-Mook Oh , Hak-Yoon Ahn , Jung-Gun You , Gi-Gwan Park , Baik-Min Sung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law PLLC
- Priority: KR10-2015-0144399 20151016
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/528 ; H01L21/768 ; H01L23/522
Abstract:
A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.
Public/Granted literature
- US20170110569A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2017-04-20
Information query
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