A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer on a semiconductor substrate; a second step of forming a second insulating film, depositing a first polysilicon, planarizing the first polysilicon, forming a third insulating film, forming a second resist, and forming a pillar-shaped semiconductor layer, a first dummy gate, and a first hard mask; and a third step of forming a fourth insulating film, depositing a second polysilicon, planarizing the second polysilicon, etching back the second polysilicon, depositing a sixth insulating film, forming a fourth resist, forming a second hard mask, forming a third hard mask, forming a second dummy gate, and forming a first dummy contact on the fin-shaped semiconductor layer.