Invention Grant
- Patent Title: Merged P-i-N Schottky structure
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Application No.: US12962563Application Date: 2010-12-07
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Publication No.: US09865749B1Publication Date: 2018-01-09
- Inventor: Davide Chiola , Kohji Andoh , Silvestro Fimiani
- Applicant: Davide Chiola , Kohji Andoh , Silvestro Fimiani
- Applicant Address: SG Singapore
- Assignee: Siliconix Technology C. V.
- Current Assignee: Siliconix Technology C. V.
- Current Assignee Address: SG Singapore
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/872 ; H01L29/868 ; H01L29/06
Abstract:
A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.
Information query
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