Invention Grant
- Patent Title: Electrode structure for resistive memory device
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Application No.: US14630438Application Date: 2015-02-24
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Publication No.: US09865798B2Publication Date: 2018-01-09
- Inventor: Yu Lu , Junjing Bao , Xia Li , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated-Toler
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/31 ; H01L21/311 ; H01L21/321 ; H01L43/02 ; H01L43/08 ; H01L43/12 ; H01L23/544 ; G11C11/16
Abstract:
A semiconductor device includes an interconnect layer and a bottom electrode of a resistive memory device. The bottom electrode is coupled to the interconnect layer, and the bottom electrode is comprised of cobalt tungsten phosphorus (CoWP).
Public/Granted literature
- US20160248002A1 ELECTRODE STRUCTURE FOR RESISTIVE MEMORY DEVICE Public/Granted day:2016-08-25
Information query
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