Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate; a variable resistance element formed over the substrate; a top electrode formed over the variable resistance element; a barrier layer formed over the top electrode and including a groove; an interlayer dielectric layer formed over the substrate to have a layer structure in which the variable resistance element, the top electrode and the barrier layer are formed in the interlayer dielectric layer; and a metal wiring including a portion formed in the groove of the barrier layer.