Invention Grant
- Patent Title: Coupling structure for inductive device
-
Application No.: US15295298Application Date: 2016-10-17
-
Publication No.: US09866173B2Publication Date: 2018-01-09
- Inventor: Huan-Neng Chen , Chewn-Pu Jou
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01F5/04
- IPC: H01F5/04 ; H01F19/04 ; H01F27/28 ; H01F38/14 ; H03B5/08 ; H03B5/12 ; H03L7/00
Abstract:
A circuit includes a coupling structure and a first inductive device. The coupling structure includes two or more conductive loops and a set of conductive paths electrically connecting the two or more conductive loops. The first inductive device is magnetically coupled with a first conductive loop of the two or more conductive loops.
Public/Granted literature
- US20170033737A1 Coupling Structure for Inductive Device Public/Granted day:2017-02-02
Information query
