Invention Grant
- Patent Title: High voltage switch module
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Application No.: US15259418Application Date: 2016-09-08
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Publication No.: US09866213B1Publication Date: 2018-01-09
- Inventor: Hao Zhang , Xueqing Li , Anup Bhalla
- Applicant: United Silicon Carbide, Inc.
- Applicant Address: US NJ Monmouth Junction
- Assignee: United Silicon Carbide, Inc.
- Current Assignee: United Silicon Carbide, Inc.
- Current Assignee Address: US NJ Monmouth Junction
- Agency: Baker & Hostetler, LLP
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H01L23/498 ; H01L23/373 ; H01L21/48 ; H01L23/00 ; H01L23/495

Abstract:
A high-voltage switch module, such as a cascode module, includes an electrically insulating heatsink with a patterned conductor layer on which high-voltage and low-voltage active semiconductor components are bonded, along with clamping, loading, and dynamic balancing components such as diodes, resistors, and capacitors. The heatsink may be alumina or aluminum nitride, for example. The conductor layer may be copper affixed to the heatsink via by direct-copper bonding or active metal brazing, for instance. High-voltage cascode modules may be formed using a low-voltage MOSFET in combination with a chain of silicon carbide normally-on n-channel JFET devices with a variety of configurations of clamping, loading, and balancing devices, for example.
Information query
IPC分类: