Invention Grant
- Patent Title: Discrete semiconductor transistor
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Application No.: US14305596Application Date: 2014-06-16
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Publication No.: US09871126B2Publication Date: 2018-01-16
- Inventor: Andreas Kiep , Stefan Willkofer , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H01L29/739 ; H01C7/04 ; H01L27/06 ; H01L49/02
Abstract:
A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of −40° C. is greater than at the temperature of 150° C.
Public/Granted literature
- US20150364468A1 Discrete Semiconductor Transistor Public/Granted day:2015-12-17
Information query
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