Invention Grant
- Patent Title: Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materials
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Application No.: US15188103Application Date: 2016-06-21
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Publication No.: US09879341B2Publication Date: 2018-01-30
- Inventor: Kaushal K. Singh , Deepak Jadhav , Ashutosh Agarwal , Ashish Goel , Vijay Parihar , Er-Xuan Ping , Randhir P. S. Thakur
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Priority: IN3110/CHE/2015 20150622
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/02 ; C23C16/54 ; C23C14/56 ; C23C16/455
Abstract:
Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.
Public/Granted literature
- US20160372351A1 METHOD AND APPARATUS FOR MICROWAVE ASSISTED CHALCOGEN RADICALS GENERATION FOR 2-D MATERIALS Public/Granted day:2016-12-22
Information query
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