Invention Grant
- Patent Title: Semiconductor device including a rectification circuit
-
Application No.: US14811230Application Date: 2015-07-28
-
Publication No.: US09881246B2Publication Date: 2018-01-30
- Inventor: Akihiko Sugata , Kohji Nozoe , Tsuzumi Ninomiya , Shinya Fujioka
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2014-170602 20140825
- Main IPC: G06K19/07
- IPC: G06K19/07 ; G06K7/10 ; G06K19/073 ; G06K19/077

Abstract:
In a semiconductor device that generates a power supply voltage from an RF carrier signal received by an antenna through the use of a rectification circuit, rectification circuits, each including a plurality of capacitors and a plurality of diodes, are connected in multistage. The rectification circuits includes limiter circuits that are turned on at a voltage larger than an on-voltage of the diodes, clamp cathodes of the diodes at a first voltage. The limiter circuits and the diodes are connected in parallel between the capacitors connected to the antenna connection terminal and a node supplied reference potential VSS of the power supply voltage.
Public/Granted literature
- US20160055406A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-25
Information query