Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15254508Application Date: 2016-09-01
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Publication No.: US09881846B2Publication Date: 2018-01-30
- Inventor: Takafumi Yamada
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2015-209389 20151023
- Main IPC: H01L23/22
- IPC: H01L23/22 ; H01L23/31 ; H01L23/367 ; H01L23/538 ; H01L25/07 ; H01L27/02 ; H01L27/06 ; H01L23/24 ; H01L23/373 ; H01L23/433 ; H01L23/488 ; H01L23/36

Abstract:
A semiconductor device includes: a semiconductor element; a laminated substrate including an insulating plate and a circuit board which is arranged on the front surface of the insulating plate and on which the semiconductor element is arranged; a lead terminal provided via solder in a major electrode of the front surface of the semiconductor element; and a sealing resin for sealing the semiconductor element, the laminated substrate, and the lead terminal, wherein a value of “Young's modulus of the sealing resin×(linear expansion coefficient of the lead terminal−linear expansion coefficient of the sealing resin)” is equal to or greater than −26×103 (Pa/° C.) and equal to or less than 50×103 (Pa/° C.).
Public/Granted literature
- US20170117201A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-04-27
Information query
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