Invention Grant
- Patent Title: Semiconductor structure having thermal backside core
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Application No.: US15221543Application Date: 2016-07-27
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Publication No.: US09881847B2Publication Date: 2018-01-30
- Inventor: Nathan Perkins
- Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L29/06 ; H01L23/498 ; H01L23/482 ; H01L23/66 ; H01L23/48 ; H01L23/00
Abstract:
A semiconductor structure includes a semiconductor substrate having a recess disposed beneath a semiconductor device. The semiconductor structure also includes a thermally conductive core disposed in the recess, and a package substrate including a heat sink. The heat sink is in thermal contact with the thermally conductive core.
Public/Granted literature
- US20160351466A1 Semiconductor Structure Having Thermal Backside Core Public/Granted day:2016-12-01
Information query
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