Invention Grant
- Patent Title: Conductive connection structure having stress buffer layer
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Application No.: US15409551Application Date: 2017-01-19
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Publication No.: US09881867B1Publication Date: 2018-01-30
- Inventor: Po-Chun Lin
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW Taoyuan
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW Taoyuan
- Agency: CKC & Partners Co., Ltd.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/522 ; H01L23/528

Abstract:
A conductive connection structure includes a semiconductor substrate, a conductive pillar, and a stress buffer layer. The conductive pillar is in the semiconductor substrate. The stress buffer layer is between the semiconductor substrate and the conductive pillar. The conductive pillar has a protruding portion penetrating through the stress buffer layer.
Information query
IPC分类: