Some demonstrative embodiments include devices and/or systems of a Silicon Controlled Rectifier (SCR). For example, a silicon controlled rectifier (SCR) may include a metal-oxide-semiconductor field-effect transistor (MOSFET), the MOSFET may include a gate; an N-type source region; a non-Lightly Doped Drain (LDD) N-type drain region; and a P-Well region extending between the N-type source region and the non-LDD N-type drain region, and extending between the non-LDD N-type drain region and a drain region of the gate.