Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
-
Application No.: US14922862Application Date: 2015-10-26
-
Publication No.: US09882062B2Publication Date: 2018-01-30
- Inventor: Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-004423 20110112
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/32 ; H01L27/12 ; H01L29/66 ; H01L29/04 ; H01L29/08 ; H01L29/10 ; H01L29/24 ; H01L29/423
Abstract:
A first oxide insulating film is formed over a substrate. After a first oxide semiconductor film is formed over the first oxide insulating film, heat treatment is performed, so that hydrogen contained in the first oxide semiconductor film is released and part of oxygen contained in the first oxide insulating film is diffused into the first oxide semiconductor film. Thus, a second oxide semiconductor film with reduced hydrogen concentration and reduced oxygen defect is formed. Then, the second oxide semiconductor film is selectively etched to form a third oxide semiconductor film, and a second oxide insulating film is formed. The second oxide insulating film is selectively etched and a protective film covering an end portion of the third oxide semiconductor film is formed. Then, a pair of electrodes, a gate insulating film, and a gate electrode are formed over the third oxide semiconductor film and the protective film.
Public/Granted literature
- US20160049519A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-02-18
Information query
IPC分类:
