According to one embodiment, a memory device includes a stacked structure and a controller. The stacked structure includes a first magnetic layer, a second magnetic layer stacked with the first magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second magnetic layer includes a first portion and a second portion stacked with the first portion. A magnetic resonance frequency of the first portion is different from a magnetic resonance frequency of the second portion. The controller is electrically connected to the stacked structure and causes a pulse current to flow in the stacked body in a first period. A length of the first period is not less than 0.9 times and not more than 1.1 times the absolute value of an odd number times of the reciprocal of a magnetic resonance frequency of the second magnetic layer.