Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15274312Application Date: 2016-09-23
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Publication No.: US09883129B2Publication Date: 2018-01-30
- Inventor: Yoshiyuki Kurokawa
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., LTD.
- Current Assignee: Semiconductor Energy Laboratory Co., LTD.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2015-188047 20150925
- Main IPC: H04N5/3745
- IPC: H04N5/3745 ; H01L27/146 ; H04N5/378 ; H04N9/804

Abstract:
The present invention provides a semiconductor device which enables data compression with a small amount of data. The present invention is a semiconductor device which includes a pixel portion, a memory, a first circuit, and a second circuit. The pixel portion has a function of obtaining imaging data. The first circuit has a function of performing discrete cosine transform on the imaging data, and generating first data. The first data is analog data, and the memory has a function of retaining the first data. The second circuit has a function of performing discrete cosine transform on the first data, and generating second data. The memory includes a first transistor, which includes an oxide semiconductor in a channel formation region, and a second transistor, in which a channel formation region is provided in a Si wafer.
Public/Granted literature
- US20170094220A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-30
Information query
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