Invention Grant
- Patent Title: Method for continuously forming noble metal film and method for continuously manufacturing electronic component
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Application No.: US14367295Application Date: 2012-12-10
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Publication No.: US09885107B2Publication Date: 2018-02-06
- Inventor: Shunichi Wakayanagi , Eisaku Watanabe
- Applicant: CANON ANELVA CORPORATION
- Applicant Address: JP Kawasaki-Shi
- Assignee: CANON ANELVA CORPORATION
- Current Assignee: CANON ANELVA CORPORATION
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2011-284947 20111227
- International Application: PCT/JP2012/081884 WO 20121210
- International Announcement: WO2013/099570 WO 20130704
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/14 ; C23C14/34 ; C23C14/35 ; C23C14/56 ; H01J37/34 ; H01J37/32
Abstract:
The purpose of the present invention is to prevent a drop in secondary electron emission characteristics due to the inside wall of a chamber being covered by a noble metal film continuously formed by plasma sputtering, and so generate and maintain the plasma. After a noble metal film is formed on a given substrate and before a film is formed on a subsequent substrate, a secondary electron emission film comprising a material having a secondary electron emission coefficient higher than that of the noble metal is formed on the inner wall of the chamber.
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