Invention Grant
- Patent Title: Method for forming sputtering target
-
Application No.: US13956731Application Date: 2013-08-01
-
Publication No.: US09885108B2Publication Date: 2018-02-06
- Inventor: Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2012-174564 20120807
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C01G15/00 ; H01L21/02 ; C23C14/08

Abstract:
To provide a sputtering target which enables an oxide film containing a plurality of metal elements and having high crystallinity. A plurality of raw materials are mixed and first baking is performed thereon, whereby a crystalline oxide is formed. The crystalline oxide is ground to form a crystalline oxide powder. The crystalline oxide powder is mixed with water and an organic substance to make slurry, and the slurry is poured into a mold provided with a filter. The water and the organic substance are removed from the slurry through the filter, so that a molded body is formed. The residual water and the residual organic substance in the molded body are removed, and then second baking is performed.
Public/Granted literature
- US20140042674A1 METHOD FOR FORMING SPUTTERING TARGET Public/Granted day:2014-02-13
Information query
IPC分类: